6 lake street, lawrence, massachusetts 01841 phone (978) 620-2600 fax (978) 689-0803 website: http://www.microsemi.com 63 electrical characteristics @ 25c, unless otherwise specified. cdi minimum maximum maximum maximum reverse maximum esds type breakdown forward forward leakage current capacitance @ class number voltage voltage voltage v r = 0 volts f = 1.0 mh z v br @ 10 av f @ 1 ma v f @ i f i r @ v r c t volts volts milliamps na volts pico farads dsb2810 20 0.41 1.0@35 100 15 2.0 1 1n5711,-1 70 0.41 1.0@15 200 50 2.0 1 dsb5712 20 0.41 1.0@35 150 16 2.0 1 1n5712-1 20 0.41 1.0@35 150 16 2.0 1 1n6857-1 20 0.35 0.75@35 150 16 4.5 2 1N6858-1 70 0.36 0.65@15 200 50 4.5 2 note: effective minority carrier lifetime ( ) is 100 pico seconds ? 1n5711-1 available in jan, jantx, jantxv and jans per mil-prf-19500/444 ? 1n5712-1 available in jan, jantx, jantxv and jans per mil-prf-19500/445 ? schottky barrier diodes ? hermetically sealed ? metallurgically bonded figure 1 design data case: hermetically sealed glass case per mil-prf-19500/444 and /445 do-35 outline lead material: copper clad steel. lead finish: tin / lead thermal resistance: ( r o jec ): 250 c/w maximum at l = .375 inch thermal impedance: ( z o jx ): 40 c/w maximum polarity: cathode end is banded. mounting position: any. maximum ratings operating temperature: -65c to +150c storage temperature: -65c to +150c operating current: 5711 types :33ma dc@ t l = +130c, l = 3/8? 2810,5712 & 6858 types :75ma dc@ t l = +110c, l = 3/8? 6857 type :75ma dc@ t l = +70c, l = 3/8? derating: all types: derate to 0 (zero)ma@+150c 1n5711 1n5711-1 1n5712-1 1n6857-1 1N6858-1 dsb2810 dsb5712 notice: qualification testing to m, jx, and js levels for 6857 and 6858 types is underway. contact the factory for qualification completion dates. these two part numbers are being introduced by cdi as ?drop-in? replacements for the 5711 and 5712. they provide a more robust mechanical design and a higher esds class with the only trade-off being an increase in capacitance.
64 1n5711, 1n5712, 1n6857, 1N6858 dsb5712 and dsb2810 including -1 versions 0 .2 .4 .6 .8 1.0 1.2 v f ? forward voltage (v) figure 1. i-v curve showing typical forward voltage variation with temperature for the dsb5712 and dsb2810 schottky diodes. 0 .2 .4 .6 .8 1.0 1.2 v f ? forward voltage (v) figure 3. i-v curve showing typical forward voltage variation with temperature for schottky diode 1n5711. 0 5.0 10 15 20 25 30 v r ? reverse voltage (v) (pulsed) figure 2. dsb5712 and dsb2810 typical variation of reverse current (i r ) vs. reverse voltage (v r ) at various temperatures. 01020 3040 50 60 v r ? reverse voltage (v) (pulsed) figure 4. 1n5711 typical variation of reverse current (i r ) vs. reverse voltage (v r ) at various temperatures. .1 1.0 10 100 i f ? forward current (ma) (pulsed) figure 5. typical dynamic resistance (r d ) vs. forward current (i f ). i f ? forward current (ma) i f ? forward current (ma) i r ? reverse current (na) i r ? reverse current (na) r d ? dynamic resistance (!!) 100 10 1.0 .1 .01 100,000 10,000 1000 1 10 1 50 10 5 1 .5 .1 .05 .01 1000 100 10 1 10,000 1000 100 10 1.0
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